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A Calculation Method of Deposition Profiles in Chemical Vapor Deposition Reactors Using Genetic Algorithms for The Automatic Modeling System of Reaction Mechanisms

Published online by Cambridge University Press:  26 February 2011

Takahiro Takahashi  and
Yoshinori Ema
Takahiro Takahashi
Affiliation:
[email protected], Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, 4328561, Japan
Yoshinori Ema
Affiliation:
[email protected], Japan
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Abstract

Fast and accurate calculation of the predicted results of Chemical Vapor Depositions (CVD) is very helpful to the high-throughput optimization of the CVD processes. In addition, robustness of the calculation process is important for automation of the optimization process. Therefore, we have developed a novel calculation method, by which robust and accurate calculations along with reduced computing cost were achieved, to reproduce deposition profiles in a macroscopic cavity (macrocavity). Boundary value problems for estimating diffusion-reaction equations by iterations of numerical integrations were changed into problems of finding the linear combinations consisted of a few functions. The coefficients of the linear combinations were optimized by Genetic Algorithms (GA). We could demonstrate the validity of the proposed method using various examples of the reaction mechanisms and conditions.

Keywords

chemical vapor deposition (CVD) (chemical reaction)chemical vapor deposition (CVD) (deposition)simulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 894: Symposium LL – Combinatorial Methods and Informatics in Materials Science , 2005 , 0894-LL03-10
Copyright
Copyright © Materials Research Society 2006

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References

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