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Buried Layer Tungsten Deposits In Porous Silicon: Metal Penetration Depth and Film Purity Determinants

Published online by Cambridge University Press:  28 February 2011

Robert S. Blewer ,
Sylvia S. Tsao  and
Gina M. Gutierrez
Robert S. Blewer
Affiliation:
Sandia National Laboratories, Center for Radiation Hardened Microelectronics, P. O. Box 5800, Albuquerque, NM 87185
Sylvia S. Tsao
Affiliation:
Sandia National Laboratories, Center for Radiation Hardened Microelectronics, P. O. Box 5800, Albuquerque, NM 87185
Gina M. Gutierrez
Affiliation:
University of New Mexico, Dept. of Electrical Engineering, Albuquerque, NM 87106
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Abstract

Infiltration of anodically prepared porous silicon with tungsten hexafluoride gas has been investigated as a function of silicon porosity, source gas pressure and carrier gas type and flow rate. The depth of tungsten metallization in the silicon has been shown to depend most sensitively on the WF, partial pressure, and less on the flow rate and carrier gas type. Penetration depths of 30 pirn have been attained. Structural integrity of the tungsten layer is dependent on the porosity of the starting material and the degree of internal oxidation of the porous silicon surface area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 287
Copyright
Copyright © Materials Research Society 1988

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References

1 See, for example, Tungsten and Other Refractory Metals for VLSI Applications. Vol. I.. edited by R. S. Blewer, and Vol. II. edited by E. K. Broadbent, (Mat. Res. Soc, Pittsburgh, PA 1986-1987) and the references therein. Also see R. S. Blewer, Solid State Technology, Nov. 1986, 117.Google Scholar
2 Tsao, S. S. and Blewer, R. S., Mat. Res. Soc. Symp. Proc. 53 (Pittsburgh, PA 1986) pp. 199. Also see S. S. Tsao, R. S. Blewer, and J. Y. Tsao, J. Appl. Phys. 49, 403 (1986). Also see R. S. Blewer, S. S. Tsao, and M. E. Tracy, Ref. 1 above (Vol. II) p. 401.CrossRefGoogle Scholar
3 Wordeman, M. R., Dennard, R. H. and Sai-Halasz, G. A., Technical Digest IEEE IEDM, 40 (1981). See also G. A. Sai-Halasz, M. T. Wordeman and R. H. Dennard, IEEE Trans. Elect. Devices ED-20. 725 (1982).Google Scholar
4 Herino, R., Bomchil, G., Barla, K. and Bertrand, C., J. Electrochem. Soc, 134, 1994 (1987).CrossRefGoogle Scholar
5 Blewer, R. S. and Tracy, M. E., Ref. 1 (Vol_I), p. 52.Google Scholar
6See Tsao, S. S., this volume.Google Scholar