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Bulk Defects and Radiation Damage in Detector Grade Silicon

Published online by Cambridge University Press:  21 February 2011

J. Walter ,
W. Garber ,
R. Wunstorf ,
W. Bugg ,
J. Harvey  and
W. Casson
J. Walter
Affiliation:
IntraSpec, Inc., Oak Ridge, TN
W. Garber
Affiliation:
IntraSpec, Inc., Oak Ridge, TN
R. Wunstorf
Affiliation:
University of Tennessee, Knoxville, TN
W. Bugg
Affiliation:
University of Tennessee, Knoxville, TN
J. Harvey
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
W. Casson
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

The importance of bulk defects in Si to the performance of Si radiation detectors is discussed and the current state of knowledge about deep level defects, including those induced by radiation damage, is briefly reviewed. The importance and origins of the fluctuations in the spatial distribution of the shallow point defects which determine the uncompensated net impurity density are discussed and information on this problem in FZ silicon, multipass FZ silicon, neutron transmutation doped Si, and radiation damaged Si is presented and compared to what should be expected on the basis of simple modeling. A new model for radiation damage induced changes in the net uncompensated impurity density is reviewed and compared to experimental data on fast neutron damage in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 515
Copyright
Copyright © Materials Research Society 1993

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