Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-08T05:15:36.531Z Has data issue: false hasContentIssue false
  • English
  • Français

Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions

Published online by Cambridge University Press:  21 February 2011

A. J. Steckl ,
C-M. Lin ,
D. Patrizio ,
A. K. Rai  and
P. P. Pronko
A. J. Steckl
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0030 (author to whom correspondence should be addressed)
C-M. Lin
Affiliation:
Intel Corporation Santa Clara, CA 95052–8121
D. Patrizio
Affiliation:
Universal Energy Systems, Dayton, OH 45232
A. K. Rai
Affiliation:
Universal Energy Systems, Dayton, OH 45232
P. P. Pronko
Affiliation:
Universal Energy Systems, Dayton, OH 45232
Get access

Abstract

The use of focused and broad beam Ga+ implantation for the fabrication of p+-n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900°C anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 161
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Si p+-n Shallow Junction Fabrication Using On-Axis Ga+ Implantation,” Applied Physics Letters, Vol.52, pp. 2049–2051, June 1988.Google Scholar
[2] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Electrical Properties of Ga-Implanted Si p+-n Shallow Junctions Fabricated by Low Temperature Rapid Thermal Annealing,” IEEE Electron Device Letters, Vol. EDL–9, pp. 594–597, November 1988.Google Scholar
[3] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Sub-100nm p+-n Shallow Junctions Fabricated by Group III Dual Ion Implantation,” Applied Physics Letters, Vol.54, pp. 1790–1792, May 1989.Google Scholar
[4] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Thin Layer p-n Junction Fabrication Using Ga and In Focused Ion Beam Implantation,” J. Vac. Sci. Tech., Vol. B6. pp. 977–981, May/June 1988.Google Scholar
[5] Steckl, A.J., “Prospects for Particle Beam and In-Situ Processing of Integrated Circuits,” Proceedings of IEEE, Vol.74, pp. 1753–1774, December 1986.Google Scholar
[6] Melngailis, J., “Focused Ion Beam Technology and Applications,” J.Vac. Sci. Tech., Vol. B5, pp. 469–495, March/April 1987.Google Scholar