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Boron Implantation into Silicon Subject to Hydrogen Plasma

Published online by Cambridge University Press:  17 March 2011

Sanjay Rangan ,
Mark Horn  and
S. Ashok
Sanjay Rangan
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
Mark Horn
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
S. Ashok
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
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Abstract

Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B5.7
Copyright
Copyright © Materials Research Society 2000

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References

1 National Technology Roadmap for Semiconductors, SIA, San Jose 1997.Google Scholar
2 Stolk, P.A.et al, J. Appl. Phys. 81 (9), 61 (1997)10.1063/1.364452Google Scholar
3 Agarwal, A.et al, Appl. Phys. Lett. 71, (21) 3141 (1997)10.1063/1.120552Google Scholar
4 Scholtz, R.et al, Appl.Phys. Lett., 72, 200 (1998)10.1063/1.120684Google Scholar
5 Agarwal, A., et al. Mat. Res. Soc. Symp. Proc. 568, 19 (1999)10.1557/PROC-568-19Google Scholar
6 Nazarov, A. N., et al. Phys. Rev. B, Vol 58 No. 7, 3522 (1998)10.1103/PhysRevB.58.3522Google Scholar
7 Singh, R. et l., J. Appl. Phys. 55 (4), 867 (1984)10.1063/1.333183Google Scholar
8 Yokota, K., et al. Ion Imp. Tech. Proc, 95 (1999)Google Scholar
9 Aspar, B., et al. Mat. Res. Soc. Symp. Proc. 510, 381 (1998).10.1557/PROC-510-381Google Scholar