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Boron Diffusion in Polycrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

Moustafa Y. Ghannam ,
Robert W. Dutton  and
Steven W. Novak
Moustafa Y. Ghannam
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94035
Robert W. Dutton
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94035
Steven W. Novak
Affiliation:
Charles Evans & Associates, 301 Chesapeake Dr. Redwood City, CA 94063
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Abstract

The diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 283
Copyright
Copyright © Materials Research Society 1987

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References

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