Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-27T15:39:55.293Z Has data issue: false hasContentIssue false
  • English
  • Français

Boron Clusters in a Complex Defect in Silicon

Published online by Cambridge University Press:  10 February 2011

M. Okamoto ,
K. Takayanagi  and
S. Takeda
M. Okamoto
Affiliation:
Takayanagi Particle Surface Project, ERATO, Japan Science and Technology Corporation, 2-13-3 Akebono, Tachikawa, Tokyo 190-0012, Japan, [email protected]
K. Takayanagi
Affiliation:
Takayanagi Particle Surface Project, ERATO, Japan Science and Technology Corporation, 2-13-3 Akebono, Tachikawa, Tokyo 190-0012, Japan, [email protected]
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1-16 Machikane-yama, Toyonaka, Osaka 560-0043, Japan
Get access

Abstract

We have investigated stability of a new kind of boron clusters in silicon crystal using the first-principles local density functional approach. In the calculation, we used three types of hydrogenterminated silicon clusters; one of these types included the four interstitial cluster I4 as a complex defect. According to our calculation, we found that a new kind of boron clustering of n-borons substituted I4 (n < 3) became most stable when the ratio r = N(Bi) / (N(Sii) + N(Bi) in a confined area was less than or equal to 1/2, where N(B) is a number of interstitial boron atoms and N(Sii) is that of interstitial silicon atoms. On the other hand, when r was greater than 1/2, the l4 would be destroyed to create the [100] split boron pair, the [110] split silicon pair, and/or the substitutional boron and interstitial silicon pair.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 343
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Okamoto, M., Hashimoto, K., and Takayanagi, K., Appl. Phys. Lett. 70, 978 (1997).Google Scholar
2. Zhu, J., dela Rubia, T. D., Yang, L. H., and Mailhiot, C., Phys. Rev. B 54, 4741 (1996).Google Scholar
3. Arai, N., Takeda, S., and Kohyama, M., Phys. Rev. Lett. 78, 4265 (1997).Google Scholar
4. Vosko, S. J., Wilk, L., and Nusair, M., Can. J. Phys. 58, 1200 (1980).Google Scholar
5. Schober, H. R., Phys. Rev. B 39, 13013 (1989).Google Scholar
6. Blöchl, P. E., Smargiassi, E., Car, R., Laks, D. B., Andreoni, W., and Pantelides, S. T., Phys, Rev. Lett. 70, 2435 (1993).Google Scholar
7. Wang, C. Z., Chan, C. T., and Ho, K. M., Phys, Rev. Lett. 66, 189 (1991).Google Scholar