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Bonding Silicon Devices on Diamond Heat Spreaders

Published online by Cambridge University Press:  10 February 2011

W. D. Fan ,
K. Jagannadham  and
J. Narayan
W. D. Fan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

We have developed diamond heat spreaders and bonding technology to silicon device structure. Diamond films were grown on molybdenum and Si substrates using hot filament chemical vapor deposition. Tin or gold-tin solders were used for bonding. Bonding of silicon on diamond was carried out at 20 Torr with hydrogen ambient and a temperature between 300 to 400°C for half hour. The diamond films were characterized by Raman spectroscopy and scanning electron microscopy. Interfaces between silicon and diamond films Were examined by scanning electron microscopy and energy dispersive spectroscopy. Pull-tests were used to determine the strength of the bonding between the silicon substrate and the diamond film. Bonding is improved with special metallization procedure using Ti and Cu films on the silicon substrate and Ti and Au or Cu films on the diamond film. Mechanisms of improvement of bonding due to metallization layers are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 211
Copyright
Copyright © Materials Research Society 1996

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References

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