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Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky  and
J.C. Phillips
G. Lucovsky
Affiliation:
Deptartments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
J.C. Phillips
Affiliation:
Lucent Bell Labs., Murray Hill, NJ 07974
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Abstract

This paper discusses chemical bonding effects at Si-dielectric interfaces that are important in the implementation of alternative gate dielectrics including: i) the character of interfacial bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) mechanical bonding constraints related to the average number of bonds/atom, Nay, and iii) band offset energies that are reduced in transition metal oxides due to the d-state origins of the conduction band states. Applications are made to specific classes of dielectric materials including i) nitrides and oxide/nitride stacks and ii) alternative high-K gate materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 201
Copyright
Copyright © Materials Research Society 1999

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References

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