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Bonding Characterization of Oxidized PDMS Thin Films

Published online by Cambridge University Press:  01 February 2011

J. J. McMahon ,
Y. Kwon ,
J.-Q. Lu ,
T. S. Cale  and
R. J. Gutmann
J. J. McMahon
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York-12180
Y. Kwon
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York-12180
J.-Q. Lu
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York-12180
T. S. Cale
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York-12180
R. J. Gutmann
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Hyperintegration, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York-12180
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Abstract

This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U8.3
Copyright
Copyright © Materials Research Society 2004

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References

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