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Bipolar Electrical Conductive Transparent Oxide, CuInO2

Published online by Cambridge University Press:  21 March 2011

Hiroshi Yanagi ,
Kazushige Ueda ,
Hiromichi Ohta ,
Masahiro Hirano  and
Hideo Hosono
Hiroshi Yanagi
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Kazushige Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Hiromichi Ohta
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, Japan
Masahiro Hirano
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, Japan
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

A transparent oxide semiconductor with delafossite structure, CuInO2, was found to exhibit both p-type and n-type conduction by doping of an appropriate impurity and tuning of proper film-deposition conditions. Thin films of Ca-doped or Sn-doped CuInO2 were prepared on -Al2O3 (001) single crystal substrates by pulsed laser deposition method. The films were deposited at 723 K in O2 atmosphere of 1.0 Pa for the Ca-doped films or 1.5 Pa for the Sn-doped films. The positive sign of the Seebeck coefficient demonstrated p-type conduction in the Ca-doped films, while the Seebeck coefficient of the Sn-doped films was negative indicating n-type conductivity. The electrical conductivities of Ca-doped and Sn-doped CuInO2 thin films were 2.8×10−3 S·cm−1 and 3.8×10−3 S·cm−1, respectively, at 300 K. The optical band gap of each film was estimated to be ∼3.9 eV. Since CuInO2 exhibited bipolarity in electrical conduction, transparent p-n homojunctions based on CuInO2 were fabricated on (111) surface of yttria-stabilized zirconia single-crystal substrates. The structure of the diode was In2O3:Sn / n-CuInO2:Sn / p-CuInO2:Ca / In2O3:Sn electrode on the substrate. The contact between the n-and p-type CuInO2 semiconducting oxides was found to be rectifying. The turn-on voltage was ∼1.8 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.14
Copyright
Copyright © Materials Research Society 2001

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References

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