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Binary HfO2: SiO2 used as High-k Gate Oxide Material in Combinatorial Material Library Method

Published online by Cambridge University Press:  26 February 2011

Wen-Hsuan Chao ,
Lih-Ping Wang ,
Shu-Huei Wang ,
Tien-Heng Huang ,
Ren-Jen Wu  and
Hung-Chiao Cheng
Wen-Hsuan Chao
Affiliation:
[email protected], Industrial Technology Research Institute, High-throughput Synthesis and Analysis Laboratory, Rm.141,Bldg. 67,195,Sec.4,Chung Hsing Rd., Chutung, Hsinchu, 310, Taiwan, 886-3-5919173, 886-3-5910086
Lih-Ping Wang
Affiliation:
[email protected], Industrial Technology Research Institute, High-throughput Synthesis and Analysis Laboratory
Shu-Huei Wang
Affiliation:
[email protected], Industrial Technology Research Institute, High-throughput Synthesis and Analysis Laboratory, Taiwan
Tien-Heng Huang
Affiliation:
[email protected], Taiwan
Ren-Jen Wu
Affiliation:
[email protected], Industrial Technology Research Institute, High-throughput Synthesis and Analysis Laboratory, Taiwan
Hung-Chiao Cheng
Affiliation:
[email protected], Taiwan
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Abstract

Hafnium silicates (HfO2:SiO2, HSO) have recently attracted much interest in the fields of fundamental science and technology because they have high dielectric constant and low leakage current. The structure and properties of HSO gate oxides were studied using a combinatorial continuous-compositional-spread method. HSO material libraries were synthesized on a 4-inch wafer at room temperature and at 200°C using a custom-built radio-frequency (RF) sputtering system. The electrical properties of HSO material libraries were measured using metal-oxide-semiconductor structure. X-ray diffraction (XRD) was utilized to characterize the structure and compositions of HSO material libraries. The effects of sputtering conditions on the properties of the HSO gate oxides were investigated. The dielectrics constants (εr) of HSO material libraries treated with rapid thermal annealing (600°C/1min/N2) were in the range 5∼23, as determined by C-V measurement, and the dielectric constant was observed to increase with HfO2 content. The I-V relations of the HSO material libraries indicate that the leakage current decreases as the amount of Si in the HSO films increases. The structural characteristics of HSO films with RTA treatment (1000°C/10sec/N2) varied from the amorphous to the crystalline state (tetragonal and monoclinic phase), according to the composition of material libraries. The correlation among the electrical properties, the composition and the crystal structure of the HSO films is discussed.

Keywords

physical vapor deposition (PVD)amorphousdielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 894: Symposium LL – Combinatorial Methods and Informatics in Materials Science , 2005 , 0894-LL03-30
Copyright
Copyright © Materials Research Society 2006

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