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Bifacial Silicon Heterojunction Solar Cell with Deposited Back Surface Field

Published online by Cambridge University Press:  01 February 2011

H. D. Goldbach ,
A. Bink  and
R. E. I Schropp
H. D. Goldbach
Affiliation:
Utrecht University, Debye Institute, SID – Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
A. Bink
Affiliation:
Utrecht University, Debye Institute, SID – Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
R. E. I Schropp
Affiliation:
Utrecht University, Debye Institute, SID – Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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Abstract

Silicon heterojunction cells (SHJ) using crystalline silicon wafers and deposited heterojunction thin film emitters are interesting from an economical, technological, and sc ientific point of view. Modules using such cells (so called HIT cells) are commercially produced by Sanyo Electric Co., using single crystal wafers. Recently reported alternatives still comprise a high-temperature diffused back surface field (BSF). In order to provide a low cost alternative, our goal is to develop SHJ using multicrystalline silicon wafers with both a deposited emitter and a deposited BSF. The present approach truly allows the development of a cheap, low temperature, all-deposited alternative for the HIT cell.

We made a bifacial silicon heterojunction solar cell, with an emitter consisting of a 7 nm intrinsic a-Si:H layer and a 15 nm n-type μc-Si:H layer. The back surface field is formed by a 30 nm p++ μc-Si:H layer. In order to achieve a functional deposited BSF the thin p++-layer has to have higher effective dopant concentration than the substrate. We used a 375 μm thick FZ wafer with a resistance of 1 cm with an activation energy of 0.2 eV. The μc-Si:H p++-layer has an activation energy of Ea = 0.082 eV. To detect the operation of the BSF the cell was made bifacial. The cell has an efficiency of 14.87 %, Voc = 571.4 mV and Jsc = 33.3 mA/cm2, Rs = 1.2 Ωcm2 and Rp = 1.8 kΩcm2. The cell, illuminated from the back, shows a Voc of 0.1 V and Jsc of 7 mA/cm2. Reference bifacial cells without BSF show no cell behavior illuminated from the rear side. External quantum efficiency (EQE) measurements with illumination at the rear side of the bifacial heterojunction cell with BSF show a quantum efficiency value of 0.17 in the range 500-800 nm, while the reference cell without BSF shows zero quantum efficiency in this range. These results show evidence for the feasibility of a truly functioning deposited BSF combined with a SHJ with deposited emitter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A23.4
Copyright
Copyright © Materials Research Society 2005

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References

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