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Beryllium Doping in MBE-grown GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

Joseph Pellegrino ,
James Griffin ,
Leary Myers  and
Michael Spencer
Joseph Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Md.;
James Griffin
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
Leary Myers
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
Michael Spencer
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
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Abstract

Beryllium is an effective p-dopant in GaAs and AlGaAs and plays an important role in device characterizations of hetero bipolar transistors. This work addresses the doping and mobility properties for two series of beryllium-doped samples: GaAs and AlGaAs. Within each series the doping ranged between 3×1015cm-3 to levels of 5×1019cm-3. Mobility and carrier concentrations were obtained through Hall and Polaron measurements. The doping concentration results suggest the onset of carrier compensation at higher doping levels. One possible explanation is that for high doping levels, Be is incorporated as interstitial donors. A thermodynamic model is used to explain the observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 881
Copyright
Copyright © Materials Research Society 1990

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