Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-25T06:37:15.962Z Has data issue: false hasContentIssue false
  • English
  • Français

Beam Annealing of Ion-Implanted Gaas and Inp

Published online by Cambridge University Press:  15 February 2011

J. C. C. Fan ,
R. L. Chapman ,
J. P. Donnelly ,
G. W. Turner  and
C. O. Bozler
J. C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
J. P. Donnelly
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
C. O. Bozler
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Get access

Abstract

A scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 261
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fan, J. C. C., Zeiger, H. J., Appl. Phys. Lett. 27, 224 (1975).CrossRefGoogle Scholar
2. For example, Shtyrkov, E. I., Khaibullin, I. B., Zaripov, M. M., Galyatudinov, N. F., Bayozitov, R. M., Sov. Phys. Semicond. 9, 1309 (1975).Google Scholar
2a Young, R. T., White, C. W., Clark, G. J., Narayan, J., Christie, W. H., Murakami, M., King, P. W., Kramer, S. D., Appl. Phys. Lett. 32, 139 (1978);Google Scholar
2b Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Deline, V. R., Williams, P., Evans, C. A., Appl. Phys. Lett. 32, 276 (1978).Google Scholar
3. Fan, J. C. C., Donnelly, J. P., Bozler, C. O., Chapman, R. L., Proc. 7th Int. Symp. on GaAs and Related Compounds, Louis, St., 1978 (Institute of Physics, London, 1979), p. 472.Google Scholar
4. Anderson, C. L., Dunlop, H. L., Hess, L. D., Olson, G. L., Vaidganathan, K. V. in Laser and Electron Beam Processing of Materials, ed. White, C. W., Peercy, P. S. (Academic Press, New York, 1980), pp.334–340.Google Scholar
5. Liu, S. G., Wu, C. P., Magee, C. W. in ref. 4, pp. 341–346.Google Scholar
6. Kachurin, G. A., Pridachin, N. B., Smirnov, L. S., Sov. Phys. Semicond. 9, 946 (1976).Google Scholar
7. Venkatesan, T. N. C., Auston, D. H., Golovchenko, J. A., Crawford, C. M., Appl. Phys. Lett. 35, 88 (1979).Google Scholar
8. Inada, T., Kato, S., Maeda, Y., Tokunaga, K. J. Appl. Phys. 50, 6000 (1979).Google Scholar
9. Sealy, B. J., Badawi, M. H., Kular, S. S., Stephens, K. G. in American Inst. of Phys. Proc. 50, 1979, pp. 610–15.Google Scholar
10. Kachurin, G. A., Nidaev, E. V., Khodyachikh, A. V., Kovaleva, L. A., Sov. Phys. Semicond. 10, 1128 (1976).Google Scholar
11. Shah, N. J., Ahmed, H., Electronics Lett. 16, 433 (1980).Google Scholar
12. Cullis, A. G., Webber, H. C., Robertson, D. S., Amer. Inst. of Physics Proc. 50, 1979, pp. 653–8.Google Scholar
13. Davies, D. E., Lorenzo, J. P., Ryan, T. O., Fitzgerald, J. J., Appl. Phys.Lett. 35, 631 (1979).Google Scholar
14. Spicer, W. E., Lindau, I., Pianetta, P., Chye, P. W., Gardner, C. M., Thin Solid Films, 56, 1 (1979).Google Scholar
15. Donnelly, J. P., Lindley, W. T., Hurwitz, C. H., Appl. Phys. Lett. 27, 41 (1975).Google Scholar
16. Salerno, J. P., Gale, R. P., Fan, J. C. C., Vaughan, J. in “Defects in Semiconductors” ed. by Narayan, J., Tan, T. Y. (Elsevier North-Holland, New York, in press).Google Scholar
17. Donnelly, J. P., Hurwitz, C. E., Appl. Phys. Lett. 31, 419 (1972).Google Scholar
18. Bogatyrev, V. A., Gavrilov, A. A., Kachurin, G. A., Smirnov, L. S., Sov. Phys. Semicond. 10, 826 (1976).Google Scholar
19. Fan, J. C. C., Chapman, R. L., Donnelly, J. P., Turner, G. W., Bozler, C. O., Appl. Phys. Lett. 34, 780 (1979).CrossRefGoogle Scholar
20. Fan, J. C. C., Bozler, C. O., Chapman, R. L., Appl. Phys. Lett. 32, 390 (1978).CrossRefGoogle Scholar
21. Bozler, C. O., Fan, J. C. C., McClelland, R. W., Proc. 7th Int. Sym. on GaAs and Related Compounds, Louis, St., 1978 (Institute of Physics, London, 1979), p. 429.Google Scholar
22. Turner, G. W., Fan, J. C. C., Hsieh, J. J., Appl. Phys. Lett. 37, 400 (1980).Google Scholar