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Barrier Metal Ions Drift into Porous Low k Dielectrics under Bias-Temperature stress

Published online by Cambridge University Press:  01 February 2011

Ming He ,
Ya Ou ,
Pei-I Wang ,
Lakshmanan H Vanamurthy ,
Hassaram Bakhru  and
Toh-Ming Lu
Ming He
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Applied Physics, Troy, New York, United States
Ya Ou
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Applied Physics, Troy, New York, United States
Pei-I Wang
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Applied Physics, Troy, New York, United States
Lakshmanan H Vanamurthy
Affiliation:
[email protected], University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
Hassaram Bakhru
Affiliation:
[email protected], University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
Toh-Ming Lu
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Applied Physics, Troy, New York, United States
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Abstract

Ta family has been used as barrier to prevent Cu diffusion into interlayer dielectric in IC applications. Recent experiments demonstrated a more severe flatband voltage shift (ΔVFB) occurred for Ta/porous low k dielectrics/Si capacitors compared to that of Cu/porous low k dielectrics/Si capacitors after a moderate bias temperature stress (BTS). The flatband voltage shift under BTS was interpreted as the penetration of Ta ions into porous low k dielectrics. However, this interpretation has been under debate. In this paper, by using Secondary Ion Mass Spectrometry (SIMS) backside sputter depth profile technique, we report a direct evidence of Ta ions inside porous methyl silsesquioxane (MSQ) in a Ta/MSQ/Si structure after BTS.

Keywords

barrier layerdiffusiondielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F05-09
Copyright
Copyright © Materials Research Society 2010

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