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Barrier Effect on Electroplated Cu Films

Published online by Cambridge University Press:  10 February 2011

R. Faust  and
Q. Jiang
R. Faust
Affiliation:
SSEMATECH, 2706 Montopolis Drive, Austin, TX 78741–6499 Texas Instruments, 13570 N. Central Expressway, Dallas, TX 75243
Q. Jiang
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95052–8090
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Abstract

The effect of various barrier materials on the microstructure of electroplated Copper films was investigated. Analysis of the Cu was performed at the as-deposited, room temperature stabilized, and annealed states. It shows that the barrier material can have a dramatic effect on the properties of electroplated Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 421
Copyright
Copyright © Materials Research Society 1999

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