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Band-Edge Photoresponse Characteristics of Diamond Msm's

Published online by Cambridge University Press:  21 February 2011

Mike Marchywka ,
Steven C. Binari ,
Deborah A. Koolbeck  and
Daniel Moses
Mike Marchywka
Affiliation:
E.O. Hulburt Center for Space Research Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375-5000 Internet: [email protected]
Steven C. Binari
Affiliation:
Electronic Science and Technology Division Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375-5000 Internet: [email protected]
Deborah A. Koolbeck
Affiliation:
E.O. Hulburt Center for Space Research Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375-5000 Internet: [email protected]
Daniel Moses
Affiliation:
E.O. Hulburt Center for Space Research Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375-5000 Internet: [email protected]
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Abstract

Band-edge photoresponse measurements on simple diamond metal-semiconductor-metal (MSM) devices can give information about the quality of the diamond material and its utility as a detector. We have fabricated several such devices on a variety of substrates and measured their response between 700 and 120nm with special emphasis around the band edge near 220nm. Steady state and transient response have been measured as a function of bias conditions. Transient response in this case refers to initial overshoot, undershoot, and increased dark current in response to a chopped vacuum ultraviolet (VUV) light signal for times on the order of seconds. We compare steady state quantum efficiency results to a simple model, discuss the characteristics of response versus applied voltage, and examine relationships between response and substrate properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 311
Copyright
Copyright © Materials Research Society 1993

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References

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