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The Band Offsets of Isomeric Boron Carbide Overlayers

Published online by Cambridge University Press:  01 February 2011

A. N. Caruso ,
P. Lunca-Popa ,
Y. B. Losovyj ,
A. S. Gunn  and
J. I. Brand
A. N. Caruso
Affiliation:
Department of Physics & Astronomy and the Center for Materials Research and Analysis (CMRA) Behlen Laboratory of Physics University of Nebraska, Lincoln, NE 68588–0111
P. Lunca-Popa
Affiliation:
Department of Physics & Astronomy and the Center for Materials Research and Analysis (CMRA) Behlen Laboratory of Physics University of Nebraska, Lincoln, NE 68588–0111 Department of Engineering University of Nebraska-Lincoln Lincoln, NE 68588–0511
Y. B. Losovyj
Affiliation:
Center for Advanced Microstructures and Devices (CAMD), Louisiana State University, Baton Rouge, LA 70806
A. S. Gunn
Affiliation:
Department of Engineering University of Nebraska-Lincoln Lincoln, NE 68588–0511
J. I. Brand
Affiliation:
Department of Engineering University of Nebraska-Lincoln Lincoln, NE 68588–0511
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Abstract

Semiconducting boron carbide overlayers, formed from the decomposition of orthocarborane and metacarborane have been studied by angle resolved photoemission. The incurrence of surface photovoltage and the photovoltaic process, from the photoemission experiment, reveal band offsets in the orthocarborane multilayer configurations that are invereted relative to single layer configurations. Defect induced gap states which trap charge at the heterostructure interface is used as one explanation of these results. The role of defects is also used to help illuminate why opposite semiconducting type materials are formed from the decomposition of isomer carborane molecules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.40
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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