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Auger Suppression in and Noise Performance of “Hot” HgCdTe IR Detectors

Published online by Cambridge University Press:  10 February 2011

F. Benjaminsen ,
A. D.van Rheenen  and
X.-Y. Chen
F. Benjaminsen
Affiliation:
Department of Physics, University of Tromsø, N-9037 Tromsø, Norway, [email protected]
A. D.van Rheenen
Affiliation:
Department of Physics, University of Tromsø, N-9037 Tromsø, Norway, [email protected]
X.-Y. Chen
Affiliation:
Department of Physics, University of Tromsø, N-9037 Tromsø, Norway, [email protected]
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Abstract

The carrier concentration in narrow-gap semiconductors operating at room temperature is usually determined by thermal generation, not by doping. By reverse biasing a specially designed HgCdTe P+ - π - N+ heterostructure, the carrier concentrations in the narrow-gap π layer are held below the intrinsic concentration. Temperature dependent measurements of the reverse-bias current-voltage characteristics reveal that the devices operate as "usual" diodes below approximately 225 K. Above this temperature, the intrinsic carrier concentration increases, and the suppression mechanism appears in the I-V curves as negative differential resistance regions. The low-frequency noise performance of these devices, both in the forward bias and the reverse bias regime, as a function of temperature will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 205
Copyright
Copyright © Materials Research Society 2000

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