Article contents
Atomistic Simulation of Silicon Grain Boundaries*
Published online by Cambridge University Press: 26 February 2011
Abstract
The bond-bending and bond-stretching three-body potential of Stillinger and Weber is used to study the energy and structure of grain boundaries in silicon.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1988
Footnotes
Work supported by the U.S. Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.
References
REFERENCES
- 2
- Cited by