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Atomistic Modeling of {311} Defects and Dislocation Ribbons

Published online by Cambridge University Press:  01 February 2011

Bart Trzynadlowski ,
Scott Dunham  and
Chihak Ahn
Bart Trzynadlowski
Affiliation:
[email protected], University of Washington, Electrical Engineering, Paul Allen Center – Room AE100R, Campus Box 352500, Seattle, WA, 98195, United States
Scott Dunham
Affiliation:
[email protected], University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
Chihak Ahn
Affiliation:
[email protected], University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
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Abstract

Ab-initio calculations of dislocation and {311} defect structures in silicon were performed in order to investigate the formation energies as functions of geometry, including the effects of applied strain, with a simple model. Predictions were made concerning the size at which a {311} defect becomes less favorable than a dislocation loop, and it was shown that this is affected by applied strain.

Keywords

dislocationssimulationelastic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E06-04
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Kresse, G. and Furthmüller, J., Phys. Rev. B 54, 11169 (1996).Google Scholar
2. Vanderbilt, D., Phys. Rev. B 41, 7892 (1990).Google Scholar
3. Kim, J., Wilkins, J.W., Khan, F.S., and Canning, A., Phys. Rev. B 55, 16186 (1997).Google Scholar
4. Diebel, M., PhD. Thesis, University of Washington, 2004.Google Scholar
5. Fastenko, P., PhD. Thesis, University of Washington, 2002.Google Scholar
6. Boninelli, S., Cherkashin, N., Claverie, A., and Cristiano, F., Appl. Phys. Let. 89, 161904 (2006).Google Scholar