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Atomie Layer Epitaxy ia a Rotating Disk Reactor

Published online by Cambridge University Press:  26 February 2011

H. Liu ,
P. A. Zawadzki  and
P. E. Norris
H. Liu
Affiliation:
EMCORE Corporation, Somerset, New Jersey.
P. A. Zawadzki
Affiliation:
EMCORE Corporation, Somerset, New Jersey.
P. E. Norris
Affiliation:
EMCORE Corporation, Somerset, New Jersey.
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Abstract

Current difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 165
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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