Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-28T18:29:52.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy

Published online by Cambridge University Press:  01 February 2011

Kenta Arima ,
Hideyuki Hara ,
Yasuhisa Sano ,
Keita Yagi ,
Ryota Okamoto ,
Junji Murata ,
Hidekazu Mimura  and
Kazuto Yamauchi
Kenta Arima
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan, +81-6-6879-7274, +81-6-6879-7272
Hideyuki Hara
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Yasuhisa Sano
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Keita Yagi
Affiliation:
[email protected], Osaka University, Research Center for Ultra-Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Ryota Okamoto
Affiliation:
[email protected], Osaka University, Research Center for Ultra-Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Junji Murata
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Hidekazu Mimura
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Kazuto Yamauchi
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Get access

Abstract

Scanning tunneling microscopy (STM) observations are performed on 4H-SiC(0001) surfaces after wet-chemical preparation steps including HF treatments.1×1 structures are formed on a terrace together with other local structures.Their atomic images are investigated in conjunction with low-energy electron diffraction and electron spectroscopy for chemical analysis.It is suggested that each bright dot forming the 1×1 phase corresponds to an OH-terminated Si atom.

Keywords

scanning probe microscopy (SPM)passivationsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-06
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lin, M. E., Strite, S., Agarwal, A., Salvador, A., Zhou, G. L., Teraguchi, N., Rockett, H., and Morkoc, H., Appl. Phys. Lett. 62, 702 (1993).Google Scholar
2. Tsuchida, H., Kamata, I., and Izumi, K., Jpn. J. Appl. Phys., Part 1 34, 6003 (1995).Google Scholar
3. Starke, U., Bram, Ch., Steiner, P.-R., Hartner, W., Hammer, L., Heinz, K., and Muller, K., Appl. Surf. Sci. 89, 175 (1995).Google Scholar
4. Starke, U., Schardt, J., and Franke, M., Appl. Phys. A, 65, 587 (1997).Google Scholar
5. Måtensson, P., Owman, F., and Johansson, L. I., Phys. Stat. Sol. (b), 202, 501 (1997).Google Scholar
6. King, S. W., Nemanich, R. J., and Davis, R. F., J. Electrochem. Soc. 146, 1910 (1999).Google Scholar
7. Sieber, N., Seyller, Th., Graupner, R., Ley, L., Mikalo, R., Hoffmann, P., Batchelor, D. R., and Schmeifler, D., Appl. Surf. Sci. 184, 278 (2001).Google Scholar
8. Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T., and Bright, T. B., Phys. Rev. Lett. 57, 249 (1986).Google Scholar
9. Hessel, H. E., Feltz, A., Reiter, M., Memmert, U., and Behm, R. J., Chem. Phys. Lett. 186, 275 (1991).Google Scholar
10. Arima, K., Endo, K., Kataoka, T., Oshikane, Y., Inoue, H., and Mori, Y., Appl. Phys. Lett. 76, 463 (2000).Google Scholar
11. Arima, K., Katoh, J., and Endo, K., Appl. Phys. Lett. 85, 6254 (2004).Google Scholar
12. Tsuchida, H., Kamata, I., and Izumi, K., J. Appl. Phys. 85, 3569 (1999).Google Scholar
13. Schardt, J., Brahm, C., Müller, S., Starke, U., Heinz, K., and Müller, K., Suf. Sci. 337, 232 (1995).Google Scholar
14. Brack, K., J. Appl. Phys. 36, 3560 (1965).Google Scholar
15. Kaplan, R. and Parrill, T. M., Surf. Sci. Lett. 165, L45 (1986).Google Scholar
16. Owman, F., Hallin, C., Mårtensson, P., and Janzen, E., J. Crystal. Growth 167, 391 (1996).Google Scholar
17. Hara, H., Sano, Y., Mimura, H., Arima, K., Kubota, A., Yagi, K., and K. Yamauchi, J. Electron. Mat. 35, L11 (2006).Google Scholar
18. Soubatch, S., Saddow, S. E., Rao, S. P., Lee, W. Y., Konuma, M., and Starke, U., Mat. Sci. Forum 483-485, 761 (2005).Google Scholar
19. Watanabe, S., Horiuchi, K., and Ito, T., Jpn. J. Appl. Phys., Part 1 32, 3420 (1993).Google Scholar
20. Kanaya, H., Usuda, K., and Yamada, K., Appl. Phys. Lett. 67, 682 (1995).Google Scholar