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Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy
Published online by Cambridge University Press: 01 February 2011
Abstract
Scanning tunneling microscopy (STM) observations are performed on 4H-SiC(0001) surfaces after wet-chemical preparation steps including HF treatments.1×1 structures are formed on a terrace together with other local structures. Their atomic images are investigated in conjunction with low-energy electron diffraction and electron spectroscopy for chemical analysis. It is suggested that each bright dot forming the 1×1 phase corresponds to an OH-terminated Si atom.
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- Copyright © Materials Research Society 2007