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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

Published online by Cambridge University Press:  26 February 2011

M Benamara ,
A Rocher ,
A Laporte ,
G Sarrabayrouse ,
L Lescouzères ,
A PeyreLavigne ,
M Fnaiech  and
A Claverie
M Benamara
Affiliation:
CEMES-LOE/CNRS, 29 rue Jeanne Marvig, BP 4347, 31055 Toulouse Cedex, (France).
A Rocher
Affiliation:
CEMES-LOE/CNRS, 29 rue Jeanne Marvig, BP 4347, 31055 Toulouse Cedex, (France).
A Laporte
Affiliation:
LAAS/CNRS, 7 av. du Colonel Roche, 31077 Toulouse Cedex, (France). Motorola Semiconducteurs S. A., Av. Général Eisenhower, 31023 Toulouse Cedex, (France).
G Sarrabayrouse
Affiliation:
LAAS/CNRS, 7 av. du Colonel Roche, 31077 Toulouse Cedex, (France).
L Lescouzères
Affiliation:
Motorola Semiconducteurs S. A., Av. Général Eisenhower, 31023 Toulouse Cedex, (France).
A PeyreLavigne
Affiliation:
Motorola Semiconducteurs S. A., Av. Général Eisenhower, 31023 Toulouse Cedex, (France).
M Fnaiech
Affiliation:
Faculté des Sciences de Monastir, 5000 Monastir (Tunisie).
A Claverie
Affiliation:
CEMES-LOE/CNRS, 29 rue Jeanne Marvig, BP 4347, 31055 Toulouse Cedex, (France).
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Abstract

The so-called Direct Wafer Bonding (DWB) technique opens new possibilities for the electronic industry but still suffers from the poor knowledge we have of the microstructure of these interfaces and hence of their electrical activity. In this work, we have extensively used Transmission Electron Microscopy techniques in plan-view and cross-section to identify the structure of the interfaces found between two bonded silicon wafers. The general structure of these interfaces is that of a perfect grain boundary and evidently depends on the misorientation between the two bonded wafers. A twist component in the range 0>θ>13˚ creates a square network of pure screw dislocation whereas an unavoidable tilt component (<0.5˚) is compensated by a periodic array of 60˚ dislocation lines perpendicular to the tilt direction. Therefore, the regularity of these networks can be disrupted by the presence of steps (of up to several nanometers) in the interface plane. Silicon oxide precipitates are seen heterogeneously distributed on the interface with preferential nucleation sites on the dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 863
Copyright
Copyright © Materials Research Society 1995

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