Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T23:17:28.182Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Motion of Dopant During Interfacial Silicide Formation

Published online by Cambridge University Press:  15 February 2011

M. Wittmer ,
C.-Y. Ting  and
K. N. Tu
M. Wittmer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
C.-Y. Ting
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
K. N. Tu
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
Get access

Abstract

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 191
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wittmer, M. and Seidel, T. E., J. Appl. Phys., 49 (1978) 5827.CrossRefGoogle Scholar
2. Wittmer, M., Ting, C.-Y., Ohdomari, I. and Tu, K. N., J. Appl. Phys., 53 (1982) 6781.CrossRefGoogle Scholar
3. Ohdomari, I., Tu, K. N., Suguro, K., Akiyama, M., Kimura, I. and Yoneda, K., Appl. Phys. Lett., 38 (1981) 1015.CrossRefGoogle Scholar
4. Bindell, J. B., Muller, W. M. and Labuda, E. F., IEEE Trans. Electron Devices, 27 (1980) 420.Google Scholar
5. Kikuchi, A. and Sugaki, S., J. Appl. Phys., 53 (1982) 3690.CrossRefGoogle Scholar
6. Wittmer, M., Ting, C.-Y and Tu, K. N., J. Appl. Phys., 54 (1983) 699.CrossRefGoogle Scholar
7. Ting, C.-Y., Wittmer, M. and Tu, K. N., Proc. 1st Int. Symp. on Very-large-scale Integration, Detroit, October 17–21, 1982, Electrochemical Society, Pennington, NJ, 1983, p. 242.Google Scholar
8. Tu, K. N. and Mayer, J. W., Silicide formation. In Poate, J. M., Tu, K. N. and Mayer, J. W. (eds.), Thin Films—Interdiffusion and Reactions, Electrochemical Society, Princeton, NJ, 1978.Google Scholar