Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T17:48:39.375Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Published online by Cambridge University Press:  25 May 2015

Karina B. Klepper ,
Ville Miikkulainen ,
Ola Nilsen ,
Helmer Fjellvåg ,
Ming Liu ,
Dhanadeep Dutta ,
David Gidley ,
William Lanford ,
Liza Ross  and
Han Li
...Show all authors
Karina B. Klepper
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ville Miikkulainen
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ola Nilsen
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Helmer Fjellvåg
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ming Liu
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
Dhanadeep Dutta
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
David Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
William Lanford
Affiliation:
Department of Physics, University of Albany, Albany, NY, U.S.A.
Liza Ross
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
Han Li
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
Sean W. King
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
Get access

Abstract

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Keywords

atomic layer depositiondielectricelastic properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1791: Symposium BB – Innovative Interconnects/Electrodes for Advanced Devices, Flexible and Green-Energy Electronics , 2015 , pp. 15 - 20
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Maex, K., Baklanov, M., Shamiryan, D., Iacopi, F., Brongersma, S., and Yanovitskaya, Z., J. Appl. Phys. 93, 8793 (2003).CrossRefGoogle Scholar
Volksen, W., Miller, R., and Dubois, G., Chem. Rev. 110, 56 (2010).CrossRefGoogle Scholar
Bohr, M., Proc. IEEE IEDM 10, (1995).Google Scholar
King, S., Simka, H., Herr, D., Akinaga, H., and Garner, M., APL Mater. 1, 040701 (2013).CrossRefGoogle Scholar
The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2011. See also: (http://www.itrs.net/).Google Scholar
Yonekura, K., Sakamori, S., Goto, K., Matsuura, M., Fujiwara, N., and Yoneda, M., J. Vac. Sci. Technol. B 22, 548 (2008).CrossRefGoogle Scholar
King, S., J. Solid State Sci. Technol. 4, N3029 (2015).CrossRefGoogle Scholar
Williams, K., Gupta, K., and Wasilik, M., J. Microelectomech. Sys. 12, 761 (2003).CrossRefGoogle Scholar
Smith, S., Wang, W., Keszler, D., and Conley, J., J. Vac. Sci. Technol. A 32, 041501 (2014).CrossRefGoogle Scholar
Tripp, M., Stampfer, C., Miller, D., Helbling, T., Herrmann, C., Hierold, C., Gall, K., George, S., and Bright, V., Sens. Actuators A 130, 419 (2006).CrossRefGoogle Scholar
Wilk, G., Wallace, R., and Anthony, J., J. Appl. Phys. 89, 5243 (2001).CrossRefGoogle Scholar
Klepper, K., Nilsen, O., and Fjellvåg, H., Dalton Trans. 39, 11628 (2010).CrossRefGoogle Scholar
Klepper, K., Nilsen, O., Hansen, P., and Fjellvåg, H., Dalton Trans. 40, 4636 (2011).CrossRefGoogle Scholar
Klepper, K., Nilsen, O., Levy, T., and Fjellvåg, H., Eur. J. Inorg. Chem. 2011, 5305 (2011).CrossRefGoogle Scholar
Miikkulainen, V., Nilsen, O., Li, H., King, S., Laitinen, M., Sajavaara, T., Fjellvåg, H., J. Vac. Sci. Technol. A 33, 01A101 (2014).CrossRefGoogle Scholar
King, S., J. Vac. Sci. Technol. A 29, 41501 (2011).CrossRefGoogle Scholar
Prakash, A., Todi, V., Sundaram, K., Ross, L., Xu, G., French, M., Henry, P., and King, S., ECS J. Solid State Sci. Techol. 4, N3122 (2015).CrossRefGoogle Scholar
Koh, D., Yum, J., Banerjee, S., Hudnall, T., Bielawski, C., Lanford, W., French, B., French, M., Henry, P., Li, H., Kuhn, M., and King, S., J. Vac. Sci. Technol. B 32, 03D117 (2014).CrossRefGoogle Scholar
King, S., Bielefeld, J., Xu, G., Lanford, W., Matsuda, Y., Dauskardt, R., Kim, N., Hondongwa, D., Olasov, L., Daly, B., Stan, G., Liu, M., Dutta, D., Gidley, D., J. Non-Cryst. Sol. 379, 67 (2013).CrossRefGoogle Scholar
Matsuda, Y., King, S., Bielefeld, J., Xu, J., and Dauskardt, R., Acta Mater. 60, 682 (2012).CrossRefGoogle Scholar
King, S., Jacob, D., Vanleuven, D., Colvin, B., Kelly, J., French, M., Bielefeld, J., Dutta, D., Liu, M., and Gidley, D., ECS J. Solid State Sci. Technol. 1, 6 (2012).Google Scholar
King, S., French, M., Bielefeld, J., and Lanford, W., J. Non-Cryst. Sol. 357, 2970 (2011).CrossRefGoogle Scholar
King, S. and Milosevic, M., J. Appl. Phys. 111, 73109 (2012).CrossRefGoogle Scholar
Milosevic, M. and King, S., ECS J. Solid State Sci. Technol. 4, N3146 (2015).CrossRefGoogle Scholar
Phillips, J. and Thorpe, M., Sol. Stat. Comm. 53, 699 (1985).CrossRefGoogle Scholar
Cai, Y. and Thorpe, M., Phys. Rev. B 40, 10535 (1985).CrossRefGoogle Scholar
King, S., Ross, L., Li, H., Xu, G., Bielefeld, J., Atkins, R., Henneghan, P., Davis, K., Johnson, D., and Lanford, W., J. Non-Cryst. Sol. 389, 78 (2014).CrossRefGoogle Scholar
Zhou, W., Bailey, S., Sooryamkumar, R., King, S., Xu, G., Mays, E., Ege, C., and Bielefeld, J., J. Appl. Phys. 110, 43520 (2011).CrossRefGoogle Scholar
Bailey, S., Mays, E., Michalak, D., Chebiam, R., King, S., and Sooryakumar, R., J. Phys. D: Appl. Phys. 46, 045308 (2013).CrossRefGoogle Scholar
Liu, X., Gill, S., Tang, F., King, S., and Nemanich, R., J. Vac. Sci. Technol. B 30, 031212 (2012).CrossRefGoogle Scholar