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Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor

Published online by Cambridge University Press:  01 February 2011

J.F. Conley Jr ,
Y. Ono ,
D.J. Tweet ,
W. Zhuang  and
R. Solanki
J.F. Conley Jr
Affiliation:
Sharp Labs of America, Camas, Washington.
Y. Ono
Affiliation:
Sharp Labs of America, Camas, Washington.
D.J. Tweet
Affiliation:
Sharp Labs of America, Camas, Washington.
W. Zhuang
Affiliation:
Sharp Labs of America, Camas, Washington.
R. Solanki
Affiliation:
Oregon Graduate Institute, Department of Electrical and Computer Engineering, Beaverton, Oregon.
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Abstract

HfO2 films have been deposited using anhydrous hafnium nitrate (Hf(NO3)4) as a precursor for atomic layer chemical vapor deposition (ALCVD). These films have been characterized using x-ray diffraction, x-ray reflectivity, atomic force microscopy, current vs. voltage, and capacitance vs. voltage measurements. An advantage of this precursor is that it produces smooth and uniform initiation of film deposition on H-terminated silicon surfaces. As deposited films remained amorphous at temperatures below ∼700°C. The effective dielectric constant of the film (neglecting quantum effects) for films less than ∼15 nm thick, was in the range of kfilm ∼ 10-11, while the HfO2 layer value was estimated to be kHfO2 ∼ 12-14. The lower than expected dielectric constant of the film stack is due in part to the presence of an interfacial layer such as HfSiOx. Excess oxygen may play a role in the lower than expected dielectric constant of the HfO2 layer. Breakdown of HfO2 films occurred at ∼5-7 MV/cm. Leakage current was lower than that of SiO2 films of comparable equivalent thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B2.2
Copyright
Copyright © Materials Research Society 2002

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