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Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

Published online by Cambridge University Press:  01 February 2011

Hiroyuki Togawa  and
Hideki Ichinose
Hiroyuki Togawa
Affiliation:
Department of Materials science, The University of Tokyo: 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Hideki Ichinose
Affiliation:
Department of Materials science, The University of Tokyo: 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Abstract

Atomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.9
Copyright
Copyright © Materials Research Society 2003

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