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Asymmetric Mosaic Spread During Relaxation in SiGe/ Si Strained Layer Superlattices Grown on Miscut Substrates

Published online by Cambridge University Press:  15 February 2011

S. Nam  and
M. S. Goorsky
S. Nam
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
M. S. Goorsky
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
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Abstract

The evolution of defects in SiGe/Si strained layer superlattices (SLS)-with thickness and composition near the critical thickness -was investigated. The structures were grown on 2° miscut (001) substrates by ultrahigh vacuum chemical vapor deposition. The samples were then annealed between 700 °C and 900 °C. After annealing, the satellite peak intensity from double axis diffraction decreased and triple axis diffraction showed that this decreased intensity was due to increased mosaic structure. Interestingly, for some of the annealed samples, the (004) reciprocal space maps showed an asymmetric mosaic spread, indicating a preferential tilt. This result stems from a preferential propagation of certain types of misfit dislocations due to the substrate miscut.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 39
Copyright
Copyright © Materials Research Society 1995

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References

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