Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T02:04:44.902Z Has data issue: false hasContentIssue false

Area-Selective Electroless Deposition of Gold Nanostructures on SiC Using Focused-Ion-Beam Preprocessing

Published online by Cambridge University Press:  06 February 2015

Hiroki Itasaka
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Masayuki Nishi*
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Masahiro Shimizu
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Kazuyuki Hirao
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Get access

Abstract

Area-selective electroless deposition of gold nanostructures on a 6H-SiC substrate is demonstrated. Gold nanostructures selectively grow on a focused ion beam (FIB)-irradiated area on the 6H-SiC substrate when the substrate is exposed to a pure HAuCl4 aqueous solution. The nucleation of gold was more favorable on the Si face than on the C face. Quantitative evaluation of the amount of gold grown both on SiC and silicon is conducted to discuss the growth of gold, where silicon is a substrate we used in our previous study on this method. We reveal the mechanism of the growth of gold nanostructures as follows: Dangling bond defects formed in the FIB-irradiated area initiate the nucleation of gold by reducing Au ions in the solution at the surface. Once the SiC-gold or the silicon-gold boundary, which meets the Schottky contact condition, has formed, electrons in the non-FIB-irradiated region under/around the FIB-irradiated one also reduce Au ions on the gold surface through the boundary.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Itasaka, H., Nishi, M., Shimotsuma, Y., Miura, K., Watanabe, M., Jain, H., and Hirao, K., J. Ceram. Soc. Jpn. 122, 543 (2014).CrossRefGoogle Scholar
Itasaka, H., Nishi, M., and Hirao, K., Jpn. J. Appl. Phys. 53, 06JF06 (2014).CrossRefGoogle Scholar
Kubo, N., Homma, T., Hondo, Y., and Osaka, T., Electrochim. Acta 51, 834 (2005).CrossRefGoogle Scholar
Burton, J. C., Long, F. H., and Ferguson, I. T., J. Appl. Phys. 86, 2073 (1999).CrossRefGoogle Scholar
Feng, Z.C., Lien, S.C., Zhao, J.H., Sun c, X.W., Lu, W., Thin Sol. Films 516, 5217 (2008).CrossRefGoogle Scholar
Chaâbane, N., Debelle, A., Sattonnay, G., Trocellier, P., Serruys, Y., Thomé, L., Zhang, Y., Weber, W.J., Meis, C., Gosmain, L., and Boulle, A., Nucl. Instrum. Methods Phys. Rev. B 286, 108 (2012).CrossRefGoogle Scholar
Matsuoka, T., Nishi, M., Shimotsuma, Y., Miura, K., and Hirao, K., J. Ceram. Soc. Jpn. 118, 575 (2010).CrossRefGoogle Scholar
Sabisch, Magdalena, Krüger, Peter, and Pollmann, Johannes, Phys. Rev. B 55, 10 561 (1997).CrossRefGoogle Scholar
Emtsev, K. V., Seyller, Th.,* and Ley, L., Broekman, L., Tadich, A., Riley, J. D., and Leckey, R. G. C., and Preuss, M., Phys. Rev. B 73, 075412 (2006).Google Scholar
Waldrop, J. R., Grant, R. W., Wang, Y. C., and Davis, R. F., J. Appl. Phys. 72, 4757 (1992).CrossRefGoogle Scholar
Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 850.Google Scholar
Porter, Lisa M., Davis, Robert F., Mater. Sci. Eng. B 34, 83 (1995).CrossRefGoogle Scholar