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Area Selective Atomic Layer Deposition by Soft Lithography

Published online by Cambridge University Press:  01 February 2011

Rong Chen ,
David W. Porter ,
Hyoungsub Kim ,
Paul C. McIntyre  and
Stacey F. Bent
Rong Chen
Affiliation:
[email protected], Stanford University, Chemistry, 381 North-South Mall, Stauffer II, Rm219, Stanford University, Stanford, California, 94305-5025, United States
David W. Porter
Affiliation:
[email protected], Stanford University, Dept. of Chemical Engineering, Stanford, CA, 94305, United States
Hyoungsub Kim
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, Stanford, CA, 94305, United States
Paul C. McIntyre
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, Stanford, CA, 94305, United States
Stacey F. Bent
Affiliation:
[email protected], Stanford University, Dept. of Chemical Engineering, Stanford, CA, 94305, United States
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Abstract

Area selective HfO2 thin film growth through atomic layer deposition (ALD) has been achieved on octadecyltrichlorosilane (ODTS) patterned Si substrates. Patterned hydrophobic self-assembled monolayers (SAMs) were first transferred to Si substrates by micro-contact printing. Using hafnium-tetrachloride or tetrakis(dimethylamido) hafnium(IV) and water as ALD precursors, amorphous HfO2 layers were then grown selectively on the SAM-free regions of the surface where native hydroxyl groups nucleate growth from the vapor phase. The HfO2 pattern was readily observed through scanning electron microscopy and scanning Auger imaging, demonstrating that soft lithography is a simple and promising method to achieve area selective ALD. To evaluate the selectivity, the resolution of the soft lithography based method was compared with that of area selective ALD of HfO2 by selective surface modification of patterned silicon oxide obtained using long-time SAM exposure. It was found that the selective surface modification showed much higher spatial resolution and selectivity, an observation consistent with previous studies indicating that highly ordered and densely packed ODTS films were important to achieve complete deactivation.

Keywords

passivationself-assemblydielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E11-05
Copyright
Copyright © Materials Research Society 2006

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