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Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

Published online by Cambridge University Press:  25 February 2011

H.K. Kim ,
J.H. Song ,
S.K. Kim ,
K. Jeong ,
C.N. Whang  and
R.J. Smith
H.K. Kim
Affiliation:
Korea Standards Research Institute, Taejon 305-606, Korea
J.H. Song
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
S.K. Kim
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
K. Jeong
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
C.N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
R.J. Smith
Affiliation:
Department of Physics, Montana State University, Bozeman, MT 59717, U.S.A.
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Abstract

Ion beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 227
Copyright
Copyright © Materials Research Society 1990

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References

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