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Application of ZnO to Passivate the GaN-based Device Structures

Published online by Cambridge University Press:  01 February 2011

Eliana Kaminska ,
Anna Piotrowska ,
Marie-Antoinette di Forte Poisson ,
Sylvain Delage ,
Hacene Lahreche ,
Norbert Kwietniewski ,
Iwona Pasternak ,
Renata Kruszka ,
Marek Guziewicz  and
Piotr Boguslawski
...Show all authors
Eliana Kaminska
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor processing for photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Anna Piotrowska
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Marie-Antoinette di Forte Poisson
Affiliation:
[email protected], Thales-Alcatel III-V Lab, Route de Nozay, Marcoussis, 91461, France
Sylvain Delage
Affiliation:
[email protected], Thales-Alcatel III-V Lab, Route de Nozay, Marcoussis, 91461, France
Hacene Lahreche
Affiliation:
[email protected], Picogiga, Place M. Rebuffat, Courtaboeuf, 91971, France
Norbert Kwietniewski
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Iwona Pasternak
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Renata Kruszka
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Marek Guziewicz
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
Piotr Boguslawski
Affiliation:
[email protected], Institute of Physics PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Elzbieta Dynowska
Affiliation:
[email protected], Institute of Physics PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Michal Borysiewicz
Affiliation:
[email protected], Institute of Electron Technology, Semiconductor Processing for Photonics, Al. Lotnikow 32/46, Warsaw, 00-743, Poland
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Abstract

The fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Keywords

passivationnitrideoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L08-08
Copyright
Copyright © Materials Research Society 2008

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