Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T18:48:59.475Z Has data issue: false hasContentIssue false
  • English
  • Français

The Application of Thick Hydrogenated Amorphous Silicon Layers to Charged Particle and X-Ray Detection

Published online by Cambridge University Press:  25 February 2011

V. Perez-Mendez ,
G. Cho ,
I. Fujieda ,
S. N. Kaplan ,
S. Qureshi  and
R. A. Street
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
R. A. Street
Affiliation:
Xerox P.A.R.C., Palo Alto, California 94304
Get access

Abstract

We outline the characteristics of thick hydrogdenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 621
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Perez-Mendez, V., Morel, J., Kaplan, S.N., Street, R.A., NIM A252 (1986) 478.CrossRefGoogle Scholar
(2) Qureshi, S., Perez-Mendez, V., Kaplan, S.N., Fujieda, I., Cho, G. and Street, R.A., Paper E. 10.4 (LBL-26997) Presented at MRS Conference, San Diego (April 1989).Google Scholar
(3) Qureshi, S., Perez-Mendez, V., Kaplan, S.N., Fujieda, I., Cho, G. and Street, R.A., IEEE Trans. Nuc. Sci. (1989) NS 36 (1989) 194.CrossRefGoogle Scholar
(4) Perez-Mendez, V., Kaplan, S.N., Ward, W., Qureshi, S., and Street, R.A., NIM A260 (1987) 195.CrossRefGoogle Scholar
(5) Equer, B. and Karar, A., NIM A271 (1988) 574 1988. J. Dubeau et al., MRS Proc. 118 (1988) 439.CrossRefGoogle Scholar
(6) Perez-Mendez, V., Kaplan, S.N., Cho, G., Fujieda, I., Qureshi, S., Ward, W. and Street, R.A.. NIM A 273(1988) 127.CrossRefGoogle Scholar
(7) Kaplan, S.N., Fujieda, I., Perez-Mendez, V., Qureshi, S., Ward, W. and Street, R.A., NIM A273 (1988) 611.CrossRefGoogle Scholar
(8) Klein, C.A., J. App. Phy. 39 (1968) 2029.CrossRefGoogle Scholar
(9) xi, J., Hollingsworth, R.E. and Madan, A., presented at Super Collider Conference New Orleans, LA. (Feb. 1989).Google Scholar
(10) Coleman, J., Photonics Spectra 21 #6 (June 1987).Google Scholar
(11) Holl, I., Lorenz, E., Mageras, G., IEEE Trans. Nuc. Sci. NS 35(1988) 105.CrossRefGoogle Scholar
(12) Stevens, A.L.N. and Schrama, A.D.M. de Pauw Phillips Res. Repts 29 (1974) 340, 29 (1974)353.Google Scholar
(13) Kaneko, S., Okumura, F., Sakamoto, M., Uchida, H., Kajiwara, Y., SPIE Vol 167, Amorphous Semiconductors for Microelectronics (1986) p. 127.Google Scholar
(14) Schwarz, R., Kolodzey, J., Aljishi, S., Wagner, S., Proc. 18th IEEE PVSC (1985) 903.Google Scholar
(15) Perez-Mendez, V., Cho, G., Fujieda, I., Kaplan, S.N., Qureshi, S. and Street, R.A., Lawrence Berkeley Laboratory, Report LBL-26254 (April 1989).Google Scholar
(16) Gray, P.R. and Meyer, R.G., “Analog Integrated Circuits”, p. 666 (John Wiley & Sons, 1986).Google Scholar
(17) Goulding, F. and Landis, D., IEEE Trans. Nuc. Sci, NS 29(1982)1125.CrossRefGoogle Scholar