Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-27T16:01:50.133Z Has data issue: false hasContentIssue false
  • English
  • Français

The Application of Laser Annealing to the Fabrication of Impatt Diode Structures

Published online by Cambridge University Press:  25 February 2011

Anthony E Adams  and
L A Hing
Anthony E Adams
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, MiddlesexUK
L A Hing
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, MiddlesexUK
Get access

Abstract

The conventional method for fabricating silicon IMPATT diode structures involves the epitaxial growth of successive n- and p-type layers onto a n+ substrate followed by a boron diffusion to form the final p+ layer. The high temperature time cycles experienced by the structure during these processes cause junction interfaces to become degraded through dopant diffusion. In this paper we examine the application of laser processing techniques to the epitaxial regrowth of low temperature deposited layers and report on the nature of the recrystallised material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 497
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Laser and electron beam processing of materials, Ed. (White, C.W., Percy, P.S.), MRS Proceedings, Academic Press 1980 Google Scholar
2. Laser and electron beams solid interactions and materials processing, Ed. (Gibbons, J.F., Hess, L.D., Sigman, T.W.), MRS Proceedings, North Holland 1981 Google Scholar
3. Laser and electron beams interactions with solids, Ed. (Appleton, B.R., Celler, G.K.), MRS Proceedings, North Holland 1982 Google Scholar
4. Hill, C..Laser and electron beams solid interactions and materials processing, 361 Google Scholar
5. Adams, A.E. and Morgan, S.L.., Journal de Physique, Vol. C5, 1983, 433 Google Scholar
6. Gibbons, J.F., Proceedings of Electrochem. Soc. Vol. 80–1, 980, 1Google Scholar
8. Adams, A.E. and Morgan, S.L., Chemical Physics Vol. , 1984 Google Scholar
9. Cullis, A.G., Webber, D.C. and Baily, P., J. Phys. E. Sci. Instrum. Vol. 12, 1970 Google Scholar
10. Pawlik, M., GEC Jrnl. of Sci. Tech. Vol. 48(2), 1982, 119 Google Scholar
11. Godfrey, D.J., Hill, A.C. and Hill, C., J. Electrochem. Soc. 129(8), 1981, 1798 Google Scholar