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Application of Amorphous GaN for Electroluminescence Device

Published online by Cambridge University Press:  21 March 2011

Tohru Honda  and
Hideo Kawanishi
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Abstract

The vacuum evaporation of GaN thin films using GaN powder (5N) for GaN-based electroluminescence devices (ELDs) is reported. The crystal structures of the evaporated GaN layers were amorphous, which was confirmed from reflection high-energy electron diffraction (RHEED) patterns. Auger electron spectra revealed that the layers have excess Ga metal. Bluish-white light emission was observed from the GaN-based ELD under AC operation at RT. Although the emission intensity was weak, the electroluminescence spectra started from the band edge of h-GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.42.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Akasaki, I.: J. Cryst. Growth 221 (2000) 231.10.1016/S0022-0248(00)00691-6Google Scholar
[2] Nakamura, S. and Fasol, G.: The Blue Laser Diode (Springer-Verlag, Berlin, 1997).Google Scholar
[3] Garter, M., Birkhahn, R., Steckl, A. J. and Scofield, J.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G11.3.Google Scholar
[4] T, Honda, Maki, K. and Kawanishi, H.: Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 (2000) 644.Google Scholar
[5] Kurai, S., Naoi, Y., Abe, T., Ohmi, S. and Sakai, S.: Jpn. J. Appl. Phys. 35 (1996) L77.10.1143/JJAP.35.L77Google Scholar
[6] Nishino, K. and Sakai, S.: Gallium Nitride and Related Semiconductors, eds. Edgar, J. H., Stride, S., Akasaki, I., Amano, H. and Wetzel, C. (1999, INSPEC, London) 367.Google Scholar