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Anomalous Leakage Current Reduction by Ramping Rate Control in Mev Implantation

Published online by Cambridge University Press:  21 February 2011

K. Hamada ,
N. Nishio  and
S. Saito
K. Hamada
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
N. Nishio
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Saito
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The crucial problem for buried layer formation using MeV implantation is the reduction of anomalous leakage current at the phosphorus dose of lxl014/cm2. We have demonstrated that the origin of anomalous leakage current is dislocations, on {111}Si planes, elongated along the <110 direction and that these defects can be reduced by using a high ramping rate above 50°C /sec. At the low ramping rate below 10°C/sec, high leakage current above 1 nA was observed , which was caused by the extension of dislocations to the surface. On the other hand, by increasing the ramping rate above 50°C/sec, dislocations were formed around the Rp, but they did not extended to the surface and as a result, low leakage current was obtained. These results suggest that some kinds of defects can be suppressed by ramping rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 739
Copyright
Copyright © Materials Research Society 1996

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References

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