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Annealing of Defects During the Deposition of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

N. Hata ,
P. Roca i Cabarrocas ,
N. Wyrsch ,
S. Wagner  and
M. Favre
N. Hata
Affiliation:
Princeton University, Princeton, NJ 08544
P. Roca i Cabarrocas
Affiliation:
Princeton University, Princeton, NJ 08544
N. Wyrsch
Affiliation:
Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Princeton, NJ 08544
M. Favre
Affiliation:
University of Neuchâtel, Neuchatel, Switzerland
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Abstract

The thickness dependence of the sub-gap optical absorption in plasma-deposited hydrogenated amorphous silicon is carefully studied by photo-thermal deflection spectroscopy. The deep-level defect concentration decays from the top surface into the bulk where it approaches the thermal equilibrium defect density. This defect profile is interpreted in terms of the annealing, during growth, of growth-induced surface defects. It is also shown that the defect profile is compatible with the known growth-temperature dependence of the average defect density in amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 615
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Knights, J.C., Biegelsen, D.K., and Solomon, I., Solid State Commun. 22, 133 (1977).Google Scholar
Jackson, W.B., Biegelsen, D.K., Nemanich, R.J., Knights, J.C., Appl. Phys.Lett. 42, 105 (1983).Google Scholar
Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B32 B23 (1985).Google Scholar
Guha, S., and den Boer, W., Agarwall, S.C., and Hack, M., Phys. Rev. B33, 2512 (1986).Google Scholar
Curtins, H. and Favre, M., in Advance a in Disordered Semiconductors - Vol. 1, Amorphous Silicon and Related Materialsf Vol. A, edited by Fritzsche, H. (World Scientific, Singapore, 1989), p.329.Google Scholar
6. Street, R.A. and Winer, K., in Materials Research Society Proceedings Vol. 149, Amorphous Silicon Technology - 1989 edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (MRS, Pittsburgh, PA, 1989), p.131.Google Scholar
7. Maruyama, A., Liu, J.Z., Chu, V., Shen, D.S. and Wagner, S., in Ref. 6, p.705.Google Scholar
8. Curtins, H., Wyrsch, N., Favre, M. and Shah, A.V., Plasma Chem. and Plasma Process. 7, 2267 (1987).Google Scholar
9. Jackson, W.B. and Amer, N.M., Phys. Rev. B25, 5559 (1982).Google Scholar
10. Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., and Chu, T.L., Appl. Phys.Lett. 50, 1521 (1987).Google Scholar
11. Winer, K. and Ley, L., in Ref. 5, p.365.Google Scholar
12. Frye, R.C., Kumler, J.J., and Wong, C.C., Appl. Phys. Lett. 50, 101 (1987).Google Scholar
13. Smith, Z E. and Wagner, S., Phys. Rev. B32, 5510 (1985).Google Scholar
14. Smith, Z E. and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).Google Scholar
15. Kida, H., Yamagishi, H., Kamada, T., Okamoto, H., and Hamakawa, Y., in First International Photovoltaic Science and Engineering Conference, edited by Konagai, M. (Tokyo, 1984), p.417.Google Scholar
16. Roca i Cabarrocas, P., Liu, J.Z., Park, H.R., Maruyama, A., and Wagner, S., Proceedings 13th Int. Conf Amorphous and Liquid Semiconductors (Asheville, North Carolina, August, 1989); J. Non-Cryst. Sol., to be published.Google Scholar