Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-12-01T00:13:03.035Z Has data issue: false hasContentIssue false

Annealing Effects on Nanoscratch Behavior of CaF2 Thin Films Growth on Si(111)

Published online by Cambridge University Press:  10 February 2011

C. M. Lepienski
Affiliation:
- Lab. de Materiais, Dept. de Física, UFPR. C. Postal 19081, 81531-990, Curitiba-PR, Brazil.
N. Mattoso
Affiliation:
- Lab. de Materiais, Dept. de Física, UFPR. C. Postal 19081, 81531-990, Curitiba-PR, Brazil.
D. H. Mosca
Affiliation:
- Lab. de Materiais, Dept. de Física, UFPR. C. Postal 19081, 81531-990, Curitiba-PR, Brazil.
W. H. Schreiner
Affiliation:
- Lab. de Materiais, Dept. de Física, UFPR. C. Postal 19081, 81531-990, Curitiba-PR, Brazil.
I. Mazzaro
Affiliation:
- Lab. de Ótica de Raios-X e Instrumentagdo, Dept. de Física, UFPR. Caixa Postal 19081 , 81531-990, Curitiba-PR, Brazil.
S. R. Teixeira
Affiliation:
- Lab. de Filmes Finos, Inst. de Física, UFRGS. Caixa Postal 15051, 91501-970, Porto Alegre-RS, Brazil.
W. A. A. Macedo
Affiliation:
- Lab. de Física Aplicada, Centro de Desenvolvimento de Tecnologia Nuclear, 30161-970, Belo Horizonte-MG, Brazil.
M. D. Martins
Affiliation:
- Lab. de Física Aplicada, Centro de Desenvolvimento de Tecnologia Nuclear, 30161-970, Belo Horizonte-MG, Brazil.
Get access

Abstract

CaF2 films with 40 nm depth were grown on Si(111) wafers by thermal evaporation in UHV machine and submitted at a RTA in situ. Three different lateral forces were observed to affect behavior during the scratch. This corresponded to three different compositions at different profiles: the CaF2 film, the interface region and the silicon substrate. The XPS spectrum shows the presence of calcium silicide at the interface region. The X-ray reflectivity measurements show that the interfaces are sharpest in annealed samples. This is in accordance with nanoscratch results, showing that the intermediary value for the friction coefficient is due the calcium silicide interface layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schowalter, L. J. and Fathauer, R. W., CRC Crit. Rews. in Sol. St. and Mat. Sciences, 15, p. 367 (1989).Google Scholar
2. Tromp, R. M. and Reuter, M. C., Phys. Rev. Lett., 61, p. 1,756 (1988).Google Scholar
3. Ohmi, S., Tsutsui, K. and Furukawa, S., Jpn. J. Appl. Phys., 33, p. 1,121 (1994).Google Scholar
4. Mattoso, N., Mosca, D. H., Schreiner, W. H., Mazzaro, I., Teixeira, S. R., Macedo, W. W. A. and Martins, M. D., accepted to publication in J.Vac. Sci. Technol. A (1998).Google Scholar
5. Oliver, W. C., Pharr, G. M., J. Mater. Res., 7, p. 1,564 (1992).Google Scholar
6. Naudon, A., Chihab, J., Goudeau, P. and Mimault, J., J. Appl. Cryst., 22, p. 460 (1989).Google Scholar
7. Pfeiffer, L., Phillips, J. M., T. P. Smith, III, Augustyniak, W. M. and West, K. W., Appl. Phys. Lett., 46, p. 947 (1985).Google Scholar
8. Singh, R., Kumar, A., Thakur, R. P. S., Chou, P., Chaudhuri, J., Gondhalekar, V. and Narayan, J., Appl. Phys. Lett., 56, p. 1,567 (1990).Google Scholar