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Annealing Effect of Cd+ Ion-Implanted Liquid Encapsulated Czochralski-GaAs

Published online by Cambridge University Press:  21 February 2011

Y. Kawasumi ,
Y. Makita ,
S. Kimura ,
T. Iida ,
M. Kotani ,
A. Obara ,
H. Shibata ,
N. Kobayashi ,
T. Tsukamoto  and
E. Kobayashi
Y. Kawasumi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305 Japan Science University of Tokyo, 1-3 Kagurazaka, Shinjuku, Tokyo 162, Japan
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
S. Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
T. Iida
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
M. Kotani
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305 Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 277-01, Japan
A. Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
H. Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305
T. Tsukamoto
Affiliation:
Japan Science University of Tokyo, 1-3 Kagurazaka, Shinjuku, Tokyo 162, Japan
E. Kobayashi
Affiliation:
Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 277-01, Japan
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Abstract

Furnace annealing (FA) and rapid thermal annealing (RTA) were made for Cd+ ion-implanted GaAs with Cd concentration, [Cd] from 1×1016cm−3 to 3×1021 cm−3. In FA samples, Raman scattering spectra exhibited a single peak at 292 cm−1 for entire [Cd] range which is LO-phonon mode from (100) GaAs. In RTA samples, LO-phonon mode is a single peak for [Cd]<1×1019cm−3 but with growing [Cd], TO-phonon mode appears for [Cd] 1×1020cm3 and becomes a dominant signal for [Cd]=3×1021 cm−3. The quenching of LO-phonon mode with increasing [Cd] was more clearly observed in RTA samples than in FA ones. Hall-effects results, however, showed that activation rate of RTA samples is 6–7 times larger than that of FA ones for [Cd] 1×1021 cm−3. 2K photoluminescence spectra revealed that in FA samples multiple shallow emissions associated with Cd are formed while in RTA ones the dominant emission is the band to Cd acceptor transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 841
Copyright
Copyright © Materials Research Society 1996

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