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Anisotropic Transport in Microcrystalline P-I-N Devices

Published online by Cambridge University Press:  15 February 2011

M. Vieira ,
A. Fantoni ,
M. Fernandes ,
A. Maçarico ,
I. Martins ,
P. Louro  and
R. Schwarz
M. Vieira
Affiliation:
FCT/UNL, Monte da Caparica, Portugal
A. Fantoni
Affiliation:
Electronics and Communications Department, ISEL, Lisboa, Portugal
M. Fernandes
Affiliation:
Electronics and Communications Department, ISEL, Lisboa, Portugal
A. Maçarico
Affiliation:
Electronics and Communications Department, ISEL, Lisboa, Portugal
I. Martins
Affiliation:
Electronics and Communications Department, ISEL, Lisboa, Portugal
P. Louro
Affiliation:
Physics Department, IST, Lisboa, Portugal
R. Schwarz
Affiliation:
Physics Department, IST, Lisboa, Portugal
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Abstract

Entirely μc-Si:H p-i-n structures presenting an enhanced sensitivity to the near infrared region and a positive spectral response under forward bias higher than the open circuit voltage are analysed under different external voltage bias and illumination conditions.

A two phase model to explain the transport properties is proposed using as input parameters the measured experimental data. The results suggest that the transport is preferentially concentrated inside the crystalline grains. The conduction within the amorphous regions is poor. The percolation path is different for electrons and holes and is determined by the local fields at the boundaries. These local fields are independent of the externally applied condition, and they can be related to the persistence of the small photocurrent observed when a bias voltage higher than the open circuit voltage is applied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 549
Copyright
Copyright © Materials Research Society 1999

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