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Anisotropic Strain Effect on Electron Transport in C60 Organic Field Effect transistors

Published online by Cambridge University Press:  07 February 2013

Akash Nigam ,
Günther Schwabegger ,
Mujeeb Ullah ,
Rizwan Ahmed ,
Ivan I. Fishchuk ,
Andrey Kadashchuk ,
Clemens Simbrunner ,
Helmut Sitter ,
Malin Premaratne  and
V.Ramgopal Rao
Akash Nigam*
Affiliation:
IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India Department of Electrical and Computer Systems Engineering, Monash University, Clayton, Victoria 3800, Australia Department of Electrical Engineering, Center of Excellence in Nanoelectronics, IIT Bombay, Mumbai, 400076, India
Günther Schwabegger
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
Mujeeb Ullah
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
Rizwan Ahmed
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria National Center for Physics, Quaid-e-Azam University Campus, Islamabad, Pakistan
Ivan I. Fishchuk
Affiliation:
Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine
Andrey Kadashchuk
Affiliation:
Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Clemens Simbrunner
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
Helmut Sitter
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
Malin Premaratne
Affiliation:
IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India Department of Electrical and Computer Systems Engineering, Monash University, Clayton, Victoria 3800, Australia
V.Ramgopal Rao
Affiliation:
IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India Department of Electrical Engineering, Center of Excellence in Nanoelectronics, IIT Bombay, Mumbai, 400076, India
*
*Email:[email protected]
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Abstract

Mechanical flexibility is one of the key advantages of organic semiconducting films in applications such as wearable-electronics or flexible displays. The present study is aimed at gaining deeper insight into the effect of strain on charge transport properties of the organic semiconductor films. We have fabricated high performance C60 top gate organic field effect transistors (OFET) on flexible substrates and characterized the devices by curling the substrates in concave and convex manner, to apply varying values of compressive and tensile strain, respectively. Electron mobility is found to increase with compressive strain and decrease with tensile strain. The observed strain effect is found to be strongly anisotropic with respect to the direction of flow of current. This observation on mobility is quantified using an Extended Gaussian Disorder Model (EGDM) for the hopping charge transport. We suggest that the observed strain dependence of the electron transport is dominated by a change in the effective charge hopping distance over the grain boundaries in polycrystalline C60 films.

Keywords

semiconductingstress/strain relationshipelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1501: Symposium P – Single-Crystalline Organic and Polymer Semiconductors—Fundamentals and Devices , 2013 , mrsf12-1501-p07-05
Copyright
Copyright © Materials Research Society 2013

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