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Anisotropic Organic/Inorganic Resists: A Novel Concept for Electron Proximity Effect Reduction

Published online by Cambridge University Press:  10 February 2011

Lhadi Merhari ,
Henry H. Li  and
Kenneth E. Gonsalves
Lhadi Merhari
Affiliation:
Ceramec R&D, F-87000, Limoges, France, [email protected]
Henry H. Li
Affiliation:
Polymer Program at the Institute of Materials Science, U-136, & Department of Chemistry, U-60, University of Connecticut, Storrs, CT 06269–3136, [email protected]
Kenneth E. Gonsalves
Affiliation:
Polymer Program at the Institute of Materials Science, U-136, & Department of Chemistry, U-60, University of Connecticut, Storrs, CT 06269–3136, [email protected]
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Abstract

Electron projection lithography is considered to be one of the best candidates for sub-100 nm production circuits. One of the major problems that hinders its development is not related to machine fabrication issues but to electron proximity effects which stem from fundamental electron-polymer interactions. During the past two decades, efforts to reduce the electron proximity effects have essentially focused on the optimization of the resist exposure by means of dose modulation correction programs. We propose a novel approach where the structure of the resist can be tailored so that controlled anisotropy is introduced to laterally constrain the electron scattering. This novel approach does not require the use of high-voltage electron beams nor the processing of a large amount of data, which is a significant economic advantage. Some concepts for the synthesis of these anisotropic resists are discussed and the preliminary example of iron oxide nanorods aligned in poly(methylmethacrylate) (PMMA) is studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 97
Copyright
Copyright © Materials Research Society 2000

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