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Analytical approach for transient photoconductivity in undoped a-Si:H

Published online by Cambridge University Press:  15 February 2011

M. Goerlitzer ,
P. Pipoz ,
H. Beck ,
N. Wyrsch  and
A. V. Shah
M. Goerlitzer
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
P. Pipoz
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
H. Beck
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
A. V. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
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Abstract

Transient photoconductive response of undoped a-Si:H has been studied; the changes were analysed between two slightly different steady-state illumination conditions, at room temperature. A theoretical model is developed to describe transient photoconductivity; it yields good agreement with the measured curves for a whole range of light intensities. Numerical evaluations allows one to extract the recombination time of electrons. Comparison with steady-state photoconductivity yields a band mobility of free electrons between 0.1 and 6 cm2V−1s−1, depending upon sample quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 503
Copyright
Copyright © Materials Research Society 1995

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