Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-28T14:31:28.085Z Has data issue: false hasContentIssue false
  • English
  • Français

Analytical and High-Resolution TEM Characterizations for Nanoscale Fractured Interfaces in Deep-Subquarter-Micron 256MBit DRAM Devices

Published online by Cambridge University Press:  11 February 2011

Wei Zhao
Wei Zhao*
Affiliation:
Department of Technology Transfer, Infineon Technologies Richmond 6000 Technology Blvd., Sandston, VA 23150, USA
Get access

Abstract

Interfaces, contacts, and homo- or hetero-junctions are critical components in nanometer dynamic random access memory (DRAM) semiconductor devices. With shrinkage in device dimensions, interfacial analysis by TEM becomes more and more challenging, especially in the case of investigating failure mechanisms for nanoscale FRACTURED INTERFACES where electronic signatures found to be open. In this article, fractured interfaces at several C1-type contacts (a path between a Bitline and a Metal 1 interconnector) in a deep-subquarter-micron 256Mbit DRAM device were investigated by a JEOL 2010F analytical transmission electron microscope (TEM) with field-emission gun (FEG) running at 200KV. Considering the difficulty to exactly focus the fractured nano-scale interfaces at sufficiently high magnifications, high-resolution TEM (HR-TEM) and analytical scanning transmission electron microscopy (STEM) coupled with x-ray energy dispersive spectroscopy (XEDS) elemental linescan techniques were employed to provide supplemental information from difference prospects. An in-depth understanding for the nanoscale interfacial fracture mechanisms was established, and a simple model is initiated accordingly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G7.15
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Zhao, W. and Graca, S., Symposium F: Nanocrystalline Semiconductor Materials and Devices, 2002 MRS Fall Meeting Google Scholar
2. Zhao, W. and Luzzi, D. E. in Influences of Interface and Dislocation Behavior on Microstructure Evolution, edited by Aindow, M., Asta, M. D., Glazov, M. V., Medlin, D. L., Rollett, A. D., and Zaiser, M. (Mater Res Soc Proc 652, Boston MA, 2000) pp. Y10.4.1∼6.Google Scholar
3. Zhao, W., Liaw, P. K., Joy, D. C., et al., Ceramic Bulletin, 75 (12), 102, (1996)Google Scholar
4. Sze, S. M., Semiconductor Devices - Physics and Technology, (John Wiley & Sons, New York, 1985) pp. 428∼506.Google Scholar
5. Wolf, S., Silicon Processing for The VLSI Era - Process Technology, 2nd ed. (Lattice Press, Sunset Beach, CA, 2000) pp. 719∼806Google Scholar
6. Zhao, W., Liaw, P. K., Belardinelli, R., Joy, D. C.; Brooks, C. R., McHargue, C. J., Metallurgical and Materials Transactions A, 31 (3A), 911–920 (2000)Google Scholar
7. Zhao, W., Liaw, P. K., Joy, D. C. and Brooks, C. R., Processing and Properties of Advanced Materials: Modeling, Design and Properties, edited by Li, B. Q., (The Minerals, Metals, and Materials Society, 1998) pp. 283–294.Google Scholar
8. Zhao, W., Liaw, P. K. and Joy, D. C., Ceramic Engineering and Science Proceedings, 18 (3), 295–302 (1997)Google Scholar
9. Zhao, W., Liaw, P. K., Joy, D. C. and Brooks, C. R., JOM, 47 (11) 137 (1997)Google Scholar
10. Zhao, W., Liaw, P. K. and Joy, D. C., JOM, 48 (11), 142 (1996).Google Scholar