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Analysis of the Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390 - 580 nm

Published online by Cambridge University Press:  01 February 2011

Wei Zhao ,
Yufeng Li ,
Yong Xia ,
Mingwei Zhu ,
Theeradetch Detchprohm ,
E. Fred Schubert  and
Christian Wetzel
Wei Zhao
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Physics, 110 8th St., Troy, NY, 12180, United States, 5182763899, 5182768042
Yufeng Li
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, Applied Physics and Astronomy, United States
Yong Xia
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, Applied Physics and Astronomy
Mingwei Zhu
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, Applied Physics and Astronomy
Theeradetch Detchprohm
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, Applied Physics and Astronomy
E. Fred Schubert
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Dept. of Electrical, Computer, and Systems Engineering
Christian Wetzel
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, Applied Physics and Astronomy
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Abstract

In an attempt to identify the performance limiting factors of green GaInN/GaN light emitting diodes (LEDs) we analyze a large number of LED dies fabricated from over 160 epitaxy runs covering the wavelength range from 390 – 580 nm on a quantitative scale of the emission power. As a function of drive current, we analyze the external quantum efficiency (EQE) with particular emphasis on the low current range. We observe three very distinct populations of EQE behaviors. We find that the EQE maximum value has a strong correlation with the forward current in this point, while it has weak correspondences with both, the forward voltage in this point, and the dominant wavelength at 20 mA. The very good linear relationship between the forward voltage in green LED dies at 1 mA and at 20 mA is also observed. All those characteristics are meaningful traits to ultimately converge to a physical electronic transport and bandstructure model for the next step enhancement of green and deep green GaInN/GaN LED performance.

Keywords

nitrideIII-Voptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF12-02
Copyright
Copyright © Materials Research Society 2006

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References

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