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Analysis of Faceted Growth Hillocks in MOCVD Grown Epitaxial HgCdTe on GaAs with a Nuclear Microprobe

Published online by Cambridge University Press:  25 February 2011

David N. Jamieson ,
S. P. Dooley ,
S. P. Russo ,
P. N. Johnston ,
G. N. Pain  and
P. W. Leech
David N. Jamieson
Affiliation:
ARC, School of Physics, University of Melbourne, Parkville, 3052, VIC, Australia
S. P. Dooley
Affiliation:
ARC, School of Physics, University of Melbourne, Parkville, 3052, VIC, Australia
S. P. Russo
Affiliation:
Department of Applied Physics, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, 3001, VIC, Australia.
P. N. Johnston
Affiliation:
Department of Applied Physics, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, 3001, VIC, Australia.
G. N. Pain
Affiliation:
Telecom Australia Research Laboratories, 770 Blackburn Rd., Clayton, 3168, VIC, Australia
P. W. Leech
Affiliation:
Telecom Australia Research Laboratories, 770 Blackburn Rd., Clayton, 3168, VIC, Australia
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Abstract

Hg1-xCdxTe epitaxial layers on GaAs substrates grown by Metal Organic Chemical Vapour Deposition (MOCVD) display growth defects resembling pyramidal faceted hillocks which appear to originate from defects originally present on the substrate. For <100> oriented GaAs substrates and normal growth conditions, these growth defects have an areal density of 1–1000 mm-2. The size of the hillocks depends on the layer thickness and they have the potential to degrade performance of optoelectronic devices fabricated in the epitaxial layers. Nuclear microprobe analysis, performed with a 2 MeV He+ beam focused to less than 5 μm in diameter, has allowed the hillocks to be imaged with the technique of Channeling Contrast Microscopy (CCM). Channeling spectra, obtained by Rutherford Backseat tering Spectrometry (RBS) of the hillocks themselves, showed that the χmin was 13 %. This was similar to the χmin of the high quality single crystal surrounding material. The CCM images also revealed extensive regions of poor channeling, with shapes that suggested that the regions originally arose from scratches in the substrate. These poor channeling regions were not readily observable by other techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 253
Copyright
Copyright © Materials Research Society 1992

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References

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