Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T23:34:22.567Z Has data issue: false hasContentIssue false
  • English
  • Français

An Ultra Low Noise Preamplifier for Room Temperature X-Ray Detectors

Published online by Cambridge University Press:  21 February 2011

G. Bertuccio ,
P. Rehak  and
D.M. Xi
G. Bertuccio
Affiliation:
Politecnico di Milano, Dipartimento di Elettronzca e Informazione, P.za Leonardo da Vinci 32, 20133 Milano, Italy
P. Rehak
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
D.M. Xi
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
Get access

Abstract

A new circuital configuration for the charge amplifier is presented. By means of a double feedback loop, the input field-effect transistor can operate with its gate junction sligtly forward biased, collecting the detector current and discharging the feedback capacitor. The feedback resistor is so avoided and no resetting device or circuit is required for the preamplifier operation. The noise is limited by the input transistor, an equivalent noise charge of 19.5 r.m.s. electrons has been measured at room temperature by employing a commercial JFET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 205
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dusi, W. et al. , Proceedings of the 7th Int. Workshop on Room Temperature Semiconductor X-y-Ray Detectors and Associated Electronics, Ravello, Italy, Sept. 23-28, 1991, published on Nuclear Instruments and Methods A322, (1992).Google Scholar
2. Landis, D.A. et al. , IEEE Trans. Nucl. Sci. NS–18, No1, 115 (1971).Google Scholar
3. Rehak, P. et al. , Nuclear Instruments and Methods A248, 367 (1986).Google Scholar
4. Bertuccio, G. et al. , Nuclear Instruments and Methods A322, 538 (1992).Google Scholar
5. Twichell, J.C. et al. , Rev. Sci. Instrum. 61 (10), October 1990.Google Scholar
6. Brauninger, H. et al. , Nuclear Instruments and Methods, A326, 129 (1993).Google Scholar
8. Pinotti, E. et al. , Nuclear Instruments and Methods A326, 85 (1993).Google Scholar
9. Gatti, E., Manfredi, P.F., Sampietro, M. and Speziali, V., Nucl. Instr. and Meth. A297, 467 (1990).Google Scholar
10. Radeka, V., IEEE Trans. Nucl. Sci. NS–20, No1, 182 (1973).Google Scholar
11. Manfredi, P.F., presented at the 1993 MRS Spring Meeting, San Francisco, CA, 1993.Google Scholar
12. Bertuccio, G. and Pullia, A., to be published on Rev. Sci. Instrum.Google Scholar
13. Bertuccio, G., Sampietro, M., Fazzi, A., 7th International Workshop on room temperature semiconductor X-y-ray detectors and associated electronics, Sept. 1991, Ravello (Italy), NIM A322, 638 (1992).Google Scholar
14. Bertuccio, G., Rehak, P. and Xi, D.M., 6th European Symposium on Semiconductor Detectors, Feb. 1992, Milano (Italy), Nuclear Instruments and Methods, A326, 71 (1993)Google Scholar