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An NMR Investigation of H Cluster Configurations in A-SI:H

Published online by Cambridge University Press:  15 February 2011

J. Todd Stephen ,
Jonathan M. Rutland ,
Daxing Han  and
Yue Wu
J. Todd Stephen
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, [email protected]
Jonathan M. Rutland
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, [email protected]
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, [email protected]
Yue Wu
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, [email protected]
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Abstract

In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distribution is larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hotwire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configuration leads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 159
Copyright
Copyright © Materials Research Society 1997

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References

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